0000000001011527

AUTHOR

L.e. Trinkler

showing 2 related works from this author

Time-resolved luminescence of CsITl crystals excited by pulsed electron beam

1997

Abstract Results of the time-resolved measurements of CsITl crystal luminescence under electron pulse excitation at room temperature are reported. The rise and decay times of both 400 and 500 nm emission bands have been measured. The results obtained show that the main mechanism of the luminescence excitation is hole recombination luminescence which is due to self-trapped hole migration toward Tl 0 centres. Stimulation spectra of photostimulated luminescence of CsITl are also analyzed.

Nuclear and High Energy PhysicsPhotostimulated luminescenceChemistryPhysics::OpticsSpectral lineCrystalCondensed Matter::Materials ScienceExcited stateCathode rayAtomic physicsLuminescenceInstrumentationRecombinationExcitationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Photostimulated processes in the CsI-Tl crystal after UV irradiation

1997

The photostimulated luminescence is studied for CsI-Tl crystal after irradiation with ultraviolet light in the 80 - 300 K temperature range. The PSL creation spectrum coincides with the D absorption band at 80 K. Three bands are observed in the stimulation spectra at 80 K: 1400, 950, and 600 nm. The 1400 and 950 nm stimulation bands are presumably explained as optical transitions in the Tl 0 and V k centers situated in the spatial correlated pairs. The stimulation at 600 nm band is ascribed to the unperturbed Tl 0 centers.

CrystalPhotostimulated luminescenceChemistryAbsorption bandUltraviolet lightIrradiationAtmospheric temperature rangePhotochemistryLuminescenceSpectral lineSPIE Proceedings
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