0000000001011527
AUTHOR
L.e. Trinkler
Time-resolved luminescence of CsITl crystals excited by pulsed electron beam
Abstract Results of the time-resolved measurements of CsITl crystal luminescence under electron pulse excitation at room temperature are reported. The rise and decay times of both 400 and 500 nm emission bands have been measured. The results obtained show that the main mechanism of the luminescence excitation is hole recombination luminescence which is due to self-trapped hole migration toward Tl 0 centres. Stimulation spectra of photostimulated luminescence of CsITl are also analyzed.
Photostimulated processes in the CsI-Tl crystal after UV irradiation
The photostimulated luminescence is studied for CsI-Tl crystal after irradiation with ultraviolet light in the 80 - 300 K temperature range. The PSL creation spectrum coincides with the D absorption band at 80 K. Three bands are observed in the stimulation spectra at 80 K: 1400, 950, and 600 nm. The 1400 and 950 nm stimulation bands are presumably explained as optical transitions in the Tl 0 and V k centers situated in the spatial correlated pairs. The stimulation at 600 nm band is ascribed to the unperturbed Tl 0 centers.