Time-resolved luminescence of CsITl crystals excited by pulsed electron beam

Abstract Results of the time-resolved measurements of CsITl crystal luminescence under electron pulse excitation at room temperature are reported. The rise and decay times of both 400 and 500 nm emission bands have been measured. The results obtained show that the main mechanism of the luminescence excitation is hole recombination luminescence which is due to self-trapped hole migration toward Tl 0 centres. Stimulation spectra of photostimulated luminescence of CsITl are also analyzed.