Modeling of differential admittance behaviour of thin amorphous semiconducting film

The understanding of the electronic properties of thin oxide film is an important step toward the understanding of the mechanisms of film dissolution and breakdown as well as for their application in the field of electrolytic capacitors and solar energy conversion. From this point of view the correct location of the characteristic energy levels (flat band potential, Ufb, and conduction (valence) band edge EC (EV)), of a passive film/electrolyte junction is the preliminary task for a deeper understanding of the mechanism of charge transfer at oxide/electrolyte interface. At this aim the most frequently employed method to locate such characteristic energy levels of semiconductor oxide/electro…