Radiofrequency performances of different Graphene Field Effect Transistors geometries

In this work, we investigated on microwave parameters geometry dependence in Graphene Field Effect Transistors (GFETs). A DC and RF characterization of the fabricated GFETs has been performed. The parametric analysis was carried out on 24 GFET families fabricated on the same chip and differing only for the channel length (Δ) and the gate length (Lg). In order to obtain a statistical average, each family included ten devices with the same geometry.Our study demonstrates that the output resistance and the cut-off frequency depend on both Δ and Lg. As expected, Rout increases with the graphene channel surface thus confirming the good quality of the fabrication procedures. An optimum region whi…

Review of the book: Introduction to PSPICE using OrCAD for Circuits and Electronics, by M. H. Rashid

Analysis of Bias-Shift Effects in Free-Running and Injection-Locked Negative Resistance Oscillators

In this paper, the interaction between DC and RF in quasi-sinusoidal free-running and injection-locked oscillators is addressed. To account for and illustrate in a user-friendly manner the bias-shift related effects stemming from such interaction, a frequency-domain method of analysis has been developed for a rather wide class of negative-resistance circuits. Grounding on a first-approximation exact perturbation-refined approach, it permits computationally efficient simulation of the oscillator behavior directly in terms of the DC and RF signals evolutions (dynamical complex envelopes). In fact, it allows the investigation of both steady-state and transient operation of the shifting-bias dr…

Fabrication and analysis of the layout impact in Graphene Field Effect Transistors (GFETs)

In this work we focused on the analysis of Graphene Field Effect Transistor (GFET) microwave parameters dependence on geometries. In particular, a statistical, experimental investigation of the cut-off frequency (ft) dependency on both the gate-drain/source distance (Δ) and the gate length (Lg) was carried out. 24 GFET families on the same chip were fabricated, each one made of 10 identical (same geometry) devices. The analysis of the measured data shows that ft is both Δ and Lg dependent, and that there exists an optimal region in Δ and Lg design space.

Synthetic approach to the design of wide-band microwave injection-locked amplifiers

In this work, a synthesis-based approach to the realization of wide-band microwave injection-locked amplifiers (ILA) is proposed. To this purpose, a transmission-type topology is combined with a feedback structure in which the "core ILA" is intentionally separated from the output (power) amplifier. A modular, matched, design of individual building blocks of the core ILA is then adopted, which allows their first-approximation exact modeling in the dynamical complex-envelope domain, following the theory earlier developed by Calandra-Sommariva. On this basis, analytic expressions for the main operating characteristics of the ILA (such as the locking bandwidth under small signal operation) are …

Impact of GFETs geometries on RF performances

Graphene is a relatively new material whose unique properties have attracted significant interest for its use in electronic and photonic applications. In particular, field effect has been proved in graphene samples and the observed high carrier mobility makes graphene an interesting solution for high frequency electronics. In this work, we focused on the analysis of microwave parameters dependence on geometries in Graphene Field Effect Transistors (GFETs). In particular, a statistical, experimental investigation of the cut-off frequency (fT) and of the output impedance (Zout) dependency on both the gate-drain/source distance (Δ) and the gate length (Lg) was carried out. 24 GFET families wer…

Photoelectrical response of Graphene Field Effect Transistors (GFETs)

In this work, we present Graphene Field Effect Transistors (GFETs) with photoelectrical response due to the photovoltaiceffect. Our final aim is to use a GFET to down convert an optical to a radiofrequency signal. The technological steps used for the devices fabrication as well as the photoelectrical characterization will be reported. Photoelectrical measurements were performed by using a 405 nm laser diode source, whose output beam was pulse amplitude-modulated at 1.33 kHz by means of a laser driver. The electrical signal out of the GFETs (in a common source amplifier configuration) was measured using a lock-in amplifier synchronized to the same reference frequency of the laser driver. Thi…

Accelerated Analysis of Low-Level Injection Operation for Transistor-Based Oscillating Amplifiers

The problem of the accelerated analysis of oscillating amplifiers is addressed. To achieve both computational efficiency and adequate accuracy also in case of transmission-type, transistor-based, circuit structures, a novel approach is proposed which makes use of a general reduced-order model of the injected oscillator. A perturbation-refined analysis method is thus applied, which permits to derive the first-order exact set of differential equations that describes the system behavior in the fundamental-frequency complex-envelope domain. As illustrated by the RF Meissner driven oscillator example presented, the devised approach achieves the stated goals, and lends itself as a convenient, des…

Approach to the Design of Transmission-Type Injection-Locked Microwave Oscillators through Behavioral Block Modeling

In this work, an attempt is made toward the development of a systematic design method for the performance- driven dimensioning of the various elements comprising the structure of modern transistor-based microwave injection- locked oscillators with transmission-type topologies (TILOs). The proposed approach is based on the use of appropriate diakoptics of the various circuit blocks into a matched environment, and their behavioral modeling in the fundamental- frequency dynamical complex envelope domain with the help of standard circuit and E.M. simulation CAD tools. This will permit, in the end, to obtain closed-form expressions for the main TILO performances in terms of the design parameters…

Computationally Efficient Analysis of Microwave Injection-Locked Amplifiers

In this paper, some preliminary results on a novel approach to the analysis of injection-locked amplifiers are presented. The proposed method is based on a behavioral block modeling of the circuit in the fundamental-frequency dynamical phasor domain. The first-order exact perturbation refined treatment developed provides, in the end, explicit equations describing the entrained oscillation amplitude and phase dynamics. A secondary simplification then can be adopted in case of low-level injection, to determine a closed form expression for the locking bandwidth, generalizing the well known Adler’s one. By virtue of its semi-analytical nature, the proposed approach turns out to be much more eff…

Photocurrent generation in Graphene Field Effect Transistors (GFETs)

In this work, we focused on the study of Graphene Field Effect Transistors (GFETs) photoelectrical response due to the combination of photovoltaic and photo-thermoelectric effects. The technological steps for the transistors fabrication together with their electro-optic response will be presented. Measurements were performed by using a 405 nm laser diode with AM modulation at 1.33 KHz shined onto the sample under test. GFETs electrical output signals were measured by using a lock-in amplifier synchronized to the same reference frequency of the laser driver. This gave us the possibility to evaluate the optical characteristics as a function of both the incident laser power and the static pola…

Fabrication and characterization of graphene field effect transistors (GFET)

Graphene is a flat monolayer of carbon atoms tightly packed into a two-dimensional (2D) honeycomb lattice. This peculiarity is responsible of extraordinary physical properties. Graphene exhibits a strong ambipolar field effect and thanks to its huge charge carrier mobility, graphene is a suitable material for high frequency Electronics. Graphene field effect transistors (GFET) for high frequency applications have recently received much attention and significant progress has been achieved in this area. GFETs have been already made by using pre-patterned metal or graphene nanoribbon (GNR) back-gates and hexagonal boron nitride as a dielectric spacer. Among the most employed techniques for the…

Microwave parameters dependence on Graphene Field Effect Transistors (GFETs) dimensions

Graphene is a relatively new material whose unique properties have attracted significant interest for its use in electronic and photonic applications. In particular, field effect has been proved in graphene samples and this feature, together with the high carrier mobility observed, makes graphene an interesting solution for high frequency electronics. In our work, we performed a statistical analysis in order to evaluate the microwave parameters dependence on Graphene Field Effect Transistors (GFETs) dimensions. In more detail, for the first time, we studied the behavior of the cut-off frequency (ft) and of the output impedance (Zout) at varying both the gate-drain/gate-source distance (Δ) a…

Infrared detection in multifunctional graphene-based transistors

In the last years great attention has been paid to graphene-based devices for optoelectronic applications such as photodetection. In this work, we report on Graphene Field Effect Transistors (GFETs) photoelectrical response due to the photo-transistor effect. Photoelectrical measurements were performed using a 1.55 μm erbium fiber laser. Optical measurements as a function of both the incident laser power and the DC bias of the fabricated devices have been carried out and show that photocurrent increases with the power of the IR beam illuminating the sample.