0000000001054729

AUTHOR

J. I. Espeso

showing 2 related works from this author

Selective area vapor-phase epitaxy and structural properties of Hg1 − xCdxTe on sapphire

1997

Selective area (SA) Hg1 − xCdxTesapphire layers have been grown using the recently developed technique of the vapor-phase epitaxy (VPE) of Hg1 − xCdxTe layers on CdTesapphire heteroepitaxial substrates (HS), which we have called “VPE on HS technique” (Sochinskii et al., J. Crystal Growth 149 (1995) 35; 161 (1996) 195). First, planar CdTe (1 1 1) 5–7 μm thick layers were grown on sapphire (0 0 0 1) wafers by metalorganic vapor-phase epitaxy (MOVPE) at 340°C for 1–2.5 h using dimethylcadmium and di-isopropyltellurium as precursors. Second, CdTe/sapphire mesas were formed using standard photolithography in the form of alternating parallel linear arrays consisting of 500 × 70 μm2 elements. Thir…

Inorganic ChemistryScanning electron microscopeChemistryMaterials ChemistryAnalytical chemistrySapphireCrystal growthMetalorganic vapour phase epitaxySubstrate (electronics)Condensed Matter PhysicsEpitaxyRutherford backscattering spectrometryCadmium telluride photovoltaicsJournal of Crystal Growth
researchProduct

Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy

1997

Hg1−xCdxI2 20–25-μm-thick layers with a uniform composition in the range of x = 0.1–0.2 were grown on CdTe substrates by vapor phase epitaxy (VPE). The growth was carried out using an α-HgI2 polycrystalline source at 200 °C and in the time range of 30–100 h. The layers were studied by scanning electron microscopy (SEM) and high resolution synchrotron x-ray topography (SXRT). The SEM and SXRT images of Hg1−xCdxI2 VPE layers allow one to identify the defects affecting the layer structure. The two main types of structural defects in the layers are subgrain boundaries and densely spaced striations similar to those referred generally to as vapor grown HgI2 bulk crystals. The effect of the growth…

Materials scienceSemiconductor MaterialsGrain BoundariesScanning electron microscopeVapor phaseGeneral Physics and AstronomyMercury Compounds ; Cadmium Compounds ; Semiconductor Materials ; Vapour Phase Epitaxial Growth ; Semiconductor Growth ; Semiconductor Epitaxial Layers ; Scanning Electron Microscopy ; X-Ray Topography ; Grain BoundariesEpitaxylaw.inventionlaw:FÍSICA [UNESCO]Cadmium CompoundsSemiconductor Epitaxial Layersbusiness.industryMercury CompoundsX-Ray TopographyUNESCO::FÍSICASynchrotronCadmium telluride photovoltaicsCrystallographySemiconductor GrowthOptoelectronicsVapour Phase Epitaxial GrowthGrain boundaryCrystalliteScanning Electron MicroscopybusinessLayer (electronics)
researchProduct