0000000001056954
AUTHOR
Anatoly Kravtsov
Numerical modelling for the diameter increase of silicon crystals grown with the pedestal method
Abstract The pedestal method is one of crucible-free crystal growth methods, that has been less researched than the well-known floating zone (FZ) method. However, the pedestal method may be a cost-effective alternative to FZ, if large diameter feed rods are available. The investigated system contains two electromagnetic inductors: high-frequency inductor for pedestal top surface melting and middle-frequency inductor for pedestal side heating. The present work describes recent advances in numerical modelling of heat transfer and phase boundaries in axially symmetrical approximation, neglecting the melt flow. The shape of high-frequency inductor was optimized with the algorithm of gradient de…