Temperature dependence of recombination radiation in semiconductor nanostructures with quantum dots containing impurity complexes

Temperature dependence of the spectral intensity of recombination radiation in a quasi-zero-dimensional structure, containing impurity complexes “A++e” (a hole localized on a neutral acceptor, interacting with an electron localized in the ground state of a quantum dot), has been investigated in an external electric field in the presence of tunneling decay of a quasistationary A+-state. Probability of dissipative tunneling of a hole has been calculated in the one-instanton approximation, and the influence of tunneling decay and of an external electric field on the A+-state binding energy and on the spectra of recombination radiation, associated with the optical transition of an electron from…