Growth of device-quality ZnO films by pulsed-laser deposition

In this work, we report on ZnO crystalline growth by pulsed-laser deposition (PLD) on quartz, sapphire, and GaN template. 1 m films were grown under different substrate temperature and background oxygen conditions. X-ray diffraction analysis indicates preferential growth along the c-axis direction with a full-width at half maximum (FWHM) of the rocking curve smaller than 200”. Low-temperature photoluminescence showed A-excitonic emission near 3.36 eV and a FWHM of D0XA emission as small as 2.89 meV at 9 K. The results prove that PLD is a low-cost technique suitable to grow heteroepitaxial ZnO structures for emitting devices.