0000000001087073
AUTHOR
J. Camacho
showing 12 related works from this author
Addressing Manufacturing Challenges with Cost-Efficient Fault Tolerant Routing
2010
The high-performance computing domain is enriching with the inclusion of Networks-on-chip (NoCs) as a key component of many-core (CMPs or MPSoCs) architectures. NoCs face the communication scalability challenge while meeting tight power, area and latency constraints. Designers must address new challenges that were not present before. Defective components, the enhancement of application-level parallelism or power-aware techniques may break topology regularity, thus, efficient routing becomes a challenge.In this paper, uLBDR (Universal Logic-Based Distributed Routing) is proposed as an efficient logic-based mechanism that adapts to any irregular topology derived from 2D meshes, being an alter…
Lattice Dynamics in Wurtzite Semiconductors: The Bond Charge Model of CdS
1999
An extension of the adiabatic bond charge model of Rustagi and Weber is used to study the lattice dynamic properties of wurtzite-type compounds. The model has been applied to the description of the phonon dispersion of CdS, which has been recently measured by neutron scattering. The agreement with the neutron data is excellent with a small set of physically meaningful parameters. The eigenvector admixture of the E2 modes, calculated at the G-point, agrees with the experimental values obtained through the isotopic mass dependence of the optical modes and ab initio calculations.
Modulation of the electronic properties of GaN films by surface acoustic waves
2003
We report on the interaction between photogenerated electron-hole pairs and surface acoustic waves (SAW) in GaN films grown on sapphire substrates. The spatial separation of photogenerated carriers by the piezoelectric field of the SAW is evidenced by the quenching of the photoluminescence (PL) intensity. The quenching levels in GaN are significantly smaller than those measured in GaAs under similar conditions. The latter is attributed to the lower exciton ionization efficiency and carrier separation probabilities mediated by the piezoelectric effect. The PL spectra also evidence energy shifts and broadenings of the electronic transitions, which are attributed to the band gap modulation by …
Raman studies of isotope effects in Si and GaAs
1999
Abstract We have measured by Raman scattering changes of the optic phonon energy and line width in Si and GaAs with isotopic composition. The phonon energies of isotopically pure samples show the expected dependence on the average atomic mass in Si and the reduced mass in GaAs, respectively, as well as small anharmonic contributions. In isotopically disordered samples we find frequency shifts of 1.15(20) cm−1 for 28Si0.530Si0.5 and 0.31(20) cm−1 for the TO phonon of natGaAs, induced by mass disorder which also contributes to the line broadening. We give theoretical estimates of these effects.
Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices
2000
6 páginas, 6 figuras, 1 tabla.
Phonon Dispersion of Wurtzite CdSe: The Bond Charge Model
2000
The phonon dispersion of wurtzite CdSe is presented along the main directions of the Brillouin zone. The study has been performed by using a bond charge model for wurtzite-type semiconductors with only six adjustable parameters. The results are compared against neutron scattering data and ab initio calculations. The phonon eigenvectors corresponding to the vibrational modes at the Γ-point are in very good agreement with the ab initio calculations.
Corrosion resistance of the vacuum arc deposited Ti, TiN and TiO2 coatings on large area glass substrates
2000
An industrial installation for vacuum arc deposition is presented. Its potential in the field of decorative coatings for large area glass sheets is demonstrated. In particular it is possible to deposit patterned coatings through a polymeric textile mask. The ability to deposit uniform multilayer coatings having interference colours onto large silicate glass sheets is shown. Titanium, titanium nitride and titanium dioxide coatings on silicate glass have been characterized in terms of composition and corrosion resistance. Depth profiling was achieved with the aid of Auger electron spectroscopy. The corrosion resistance of TiN coatings is higher than that of TiO 2 . The corrosion resistance of…
Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs
2002
5 páginas, 4 figuras, 1 tabla.
Acoustically tunable photonic structures based on microcavity polaritons
2006
Abstract The interaction between surface acoustic waves (SAWs) with (Al,Ga)As microcavity polaritons results in the formation of a dynamic optical superlattice with folded light dispersion and energy stop bands when the lower polariton branch is predominantly of photonic character. For small detunings between the excitonic and optical cavity resonances, the SAW bleaches the polariton resonances through the efficient dissociation of the excitons by its piezoelectric field.
High-Pressure Raman Study of Zincblende, Cinnabar, and Cmcm Phases Of ZnTe
2002
Raman measurements of ZnTe have been performed at pressures up to 15 GPa. Frequencies, line widths, and intensities of first- and second-order Raman features of the zincblende phase (0-9.5 GPa) were studied in detail. In this note, we focus on the Raman spectra of the high-pressure cinnabar and Cmcm phases. In the transition regime from cinnabar to Cmcm (12.2 to 13.7 GPa) the Raman data indicate the possible existence of a new intermediate high-pressure phase.
Band Alignments in InxGa1–xP/GaAs Heterostructures Investigated by Pressure Experiments
2000
6 páginas, 3 figuras.
B1 Was the Ancestor B Chromosome Variant in the Western Mediterranean Area in the Grasshopper Eyprepocnemis plorans.
2014
We analyzed the distribution of 2 repetitive DNAs, i.e. ribosomal DNA (rDNA) and a satellite DNA (satDNA), on the B chromosomes found in 17 natural populations of the grasshopper Eyprepocnemis plorans plorans sampled around the western Mediterranean region, including the Iberian Peninsula, Balearic Islands, Sicily, and Tunisia. Based on the amount of these repetitive DNAs, 4 types of B variants were found: B 1 , showing an equal or higher amount of rDNA than satDNA, and 3 other variants, B 2 , B 24 and B 5 , bearing a higher amount of satDNA than rDNA. The variants B 1 and B 2 varied in size among populations: B 1 was about half the size of the X chromosome in Balearic Islands, but two-thir…