0000000001132007

AUTHOR

Crupi

showing 2 related works from this author

Fast, high-efficiency Germanium quantum dot photodetectors

2012

We present on high efficiency metal-insulator-semiconductor (MIS) photodetectors based on amorphous germanium quantum dots (QDs) embedded in a SiO2 matrix. High internal quantum efficiencies (IQE) were achieved across a broad wavelength range, with peak value reaching 700% at-10 V applied bias due to high internal photoconductive gain. The transient photoresponse behavior is also studied and it was found that the response time of the photodetector depends on the thickness of the QD layer. We also discuss the conduction mechanism which leads to the high photoconductive gain. © 2012 IEEE.

Materials sciencebusiness.industryGermaniumPhotoconductivitychemistry.chemical_elementResponse timePhotodetectorquantum dotGermaniumThermal conductionSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della MateriaOpticschemistryQuantum dotOptoelectronicsTransient (oscillation)photodetectorElectrical and Electronic EngineeringbusinessQuantum
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Residual crystalline silicon phase in silicon-rich-oxide films subjected to high temperature annealing

2002

Structural properties of silicon rich oxide films (SRO) have been investigated by means of micro-Raman spectroscopy and transmission electron microscopy (TEM). The layers were deposited by plasma enhanced chemical vapor deposition using different SiH4/O2 gas mixtures. The Raman spectra of the as-deposited SRO films are dominated by a broad band in the region 400-500 cm-1 typical of a highly disordered silicon network. After annealing at temperatures above 1000°C in N2, the formation of silicon nanocrystals is observed both in the Raman spectra and in the TEM images. However, most of the precipitated silicon does not crystallize and assumes an amorphous microstructure. © 2002 The Electrochem…

Materials scienceSiliconNanocrystal RamanAnnealing (metallurgy)Analytical chemistrychemistry.chemical_elementMineralogySurfaces Coatings and FilmSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della Materiasymbols.namesakePlasma-enhanced chemical vapor depositionMaterials ChemistryElectrochemistryCrystalline siliconRAMAN-SPECTROSCOPY; MICROCRYSTALLINE SILICON; THIN-FILMS; SCATTERING; SPECTRA; SUPERLATTICES; NANOCRYSTALS; SIO2-FILMS; SIZERenewable Energy Sustainability and the EnvironmentNanocrystalline siliconSurfaces and InterfacesCondensed Matter PhysicsCrystallographic defectSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsAmorphous solidchemistrysymbolsRaman spectroscopy
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