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RESEARCH PRODUCT

Fast, high-efficiency Germanium quantum dot photodetectors

LiuP.aLeS.t.aLeeS.aPaineD.aZaslavskyA.aPacificiD.aCosentinoS.bMirabellaS.bMiritelloM.bCrupiI.bTerrasiA

subject

Materials sciencebusiness.industryGermaniumPhotoconductivitychemistry.chemical_elementResponse timePhotodetectorquantum dotGermaniumThermal conductionSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della MateriaOpticschemistryQuantum dotOptoelectronicsTransient (oscillation)photodetectorElectrical and Electronic EngineeringbusinessQuantum

description

We present on high efficiency metal-insulator-semiconductor (MIS) photodetectors based on amorphous germanium quantum dots (QDs) embedded in a SiO2 matrix. High internal quantum efficiencies (IQE) were achieved across a broad wavelength range, with peak value reaching 700% at-10 V applied bias due to high internal photoconductive gain. The transient photoresponse behavior is also studied and it was found that the response time of the photodetector depends on the thickness of the QD layer. We also discuss the conduction mechanism which leads to the high photoconductive gain. © 2012 IEEE.

yearjournalcountryeditionlanguage
2012-08-01
10.1109/lec.2012.6410978http://www.cnr.it/prodotto/i/232690