Pressure Dependence of Positron Annihilation in Si

The pressure dependence of the electron-positron and the electron-electron momentum densities in silicon are studied. The observations that the electron-positron momentum density increases more rapidly with pressure than the electron-electron momentum density alone is explained in terms of increased positron penetration into the ion cores. The computational technique used here is based on the independent-particle model (IPM) coupled with the use of the electron pseudo-wave functions.