0000000001203308
AUTHOR
Mathias Klaeui
Spin orbit torque switching in Ta/CoFeB/MgO without longitudinal fields
Intense investigations are carried out on novel magnetic materials systems with perpendicular magnetic anisotropy (PMA), where new spin-orbit effects occur due to structural inversion asymmetry (SIA). So called spin-orbit torques (SOTs), have been observed for the first time in PMA nano-structures with SIA, when an electric current is injected [1-3], leading to ultra-efficient current-induced domain wall motion and current-induced magnetization switching [2,3].
Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films
A. Ross and M.K. acknowledge support from the Graduate School of Excellence Materials Science in Mainz (Grant No.DFG/GSC 266). This work was supported by the Max Planck Graduate Center with the Johannes Gutenberg-Universitat Mainz (MPGC). A. Ross, R.L., and M.K. acknowledge support from the DFG Projects No. 423441604 and No. 403502522. R.L. acknowledges the European Union’s Horizon 2020 research and innovation programme under the Marie Sklodowska-Curie Grant Agreement FAST No. 752195. All authors from Mainz also acknowledge support from both MaHoJeRo (DAAD Spintronics network, Project No. 57334897), SPIN+X (DFG SFB TRR 173, Project No. A01) and KAUST (Grant No. OSR-2019-CRG8-4048.2). D.A.G.…
Dynamics of topological spin structures
Topological spin structures that emerge from the Dzyaloshinskii-Moriya interaction (DMI), such as chiral domain walls and skyrmions have become the focus of intense investigations due to exciting physics and possible applications [1].
Automotive domain wall propagation in ferromagnetic rings
Automotive domain wall propagation is a self-propelling motion utilizing the energy stored in a particular energy reservoir of the spin structure to speed up domain wall beyond its equilibrium value given by external driving force and damping. Such a concept of DW motion is of great interest due to recent development of spintronic devices based on domain walls, where automotion could be used to assist or prevent domain wall pinning at low driving fields1-2. In turn, most of studies so far have been devoted to the automotion invoked by DW transformations from metastable to stable states3-4; appearing at sufficiently high magnetic fields strong and enough to trigger domain wall spin structure…
Multiferroic BiFeO<inf>3</inf> for conductance control at the LaAlO<inf>3</inf>/SrTiO<inf>3</inf>-interface
Multiferroic materials possessing both magnetic and ferroelectric order enable in principle to switch order parameters using not the direct reciprocal field, e.g. to switch the magnetization by an electric field or the electric polarization by a magnetic field. A recent breakthrough was achieved by the demonstration of the ferromagnetic switching of a Co layer with an electric field employing the multiferroic BiFeO 3 [1]. The latter material is a perovskite based oxide that shows stable ferro-electricity as well as an antiferromagnetic order at room temperature [2,3]. Due to a Dzyaloshinskii-Moriya interaction induced by rotation of oxygen octahedra leading to noncollinear Fe-O-Fe bonds a s…
Antiferromagnetic Insulatronics: spintronics without magnetic fields
While known for a long time, antiferromagnetically ordered systems have previously been considered, as expressed by Louis Neel in his Nobel Prize Lecture, to be “interesting but useless”. However, since antiferromagnets potentially promises faster operation, enhanced stability with respect to interfering magnetic fields and higher integration due to the absence of dipolar coupling, they could potentially become a game changer for new spintronic devices. The zero net moment makes manipulation using conventional magnetic fields challenging. However recently, these materials have received renewed attention due to possible manipulation based on new approaches such as photons or spin-orbit torqu…
Local control of domain wall dynamics in ferromagnetic rings
Ferromagnetic nanorings are of great interest due to prospective applications in memory and logic devices based on domain wall (DW) motion.1-3A key-prerequisite for their realization is a reproducible domain wall spin structure with a well-controllable wall velocity. We have found that DW propagation in magnetic ring is characterized by non-constant vortex DW velocity even below Walker breakdown4 (as opposed to straight wires). Several studies have been devoted to the optimization of ring reversal on a global scale using out-of plane field5 or flux charges emanating from neighboring rings if placed in close proximity6. However, these methods involve DW pinning and vortex nucleation processe…
Ferromagnetic layer thickness dependence of the Dzyaloshinskii-Moriya interaction and spin-orbit torques in Pt\Co\AlOx
We report the thickness dependence of Dzyaloshinskii-Moriya interaction (DMI) and spin-orbit torques (SOTs) in Pt\Co(t)\AlOx, studied by current-induced domain wall (DW) motion and second-harmonic experiments. From the DW motion study, a monotonous decay of the effective DMI strength with an increasing Co thickness is observed, in agreement with a DMI originating at the Pt\Co interface. The study of the ferromagnetic thickness dependence of spin-orbit torques reveals a more complex behavior. The effective SOT-field driving the DW motion is found to initially increase and then saturate with an increasing ferromagnetic thickness, while the effective SOT-fields acting on a saturated magnetic s…
Interfacial Oxide Modulated unique Exchange Bias in CrPS4/Fe3GeTe2 van der Waals heterostructures
Two-dimensional van der Waals heterostructures are an attractive platform for studying exchange bias due to their defect free and atomically flat interfaces. Chromium thiophosphate (CrPS4), an antiferromagnet, has uncompensated magnetic spins in a single layer that make it an excellent candidate for studying exchange bias. In this study, we examined the exchange bias in CrPS4/Fe3GeTe2 van der Waals heterostructures using anomalous Hall measurements. Our results show that the exchange bias strength is robust for clean interfaces, with a hysteresis loop shift of about 55 mT at 5 K for few-layer Fe3GeTe2, which is larger than that obtained in most van der Waals AFM/FM heterostructures. However…
Data for the article "An insulating doped antiferromagnet with low magnetic symmetry as a room temperature spin conduit "
Data for the article "An insulating doped antiferromagnet with low magnetic symmetry as a room temperature spin conduit " (https://aip.scitation.org/doi/full/10.1063/5.0032940 and https://arxiv.org/abs/2011.09755)