0000000001216024
AUTHOR
Yuri P. Yashin
Photoemission of spinpolarized electrons from strained GaAsP
Strained layer GaAs.95P.05 photo cathodes are presented, which emit electron beams spinpolarized to a degree of P = 75% typically. Quantum yields around QE = 0.4% are observed routinely. The figure of merit P2 × QE = 2.3 × 10−3 is comparable to that of the best strained layer cathodes reported in literature. The optimum wavelength of irradiating light around 830 nm is in convenient reach of Ti:sapphire lasers or diode lasers respectively. The cathodes are produced using MOCVD-techniques. A GaAs.55P.45-GaAs.85P.15 superlattice structure prevents the migration of dislocations from the substrate and bottom layers to the strained overlayer. The surface is protected by an arsenic layer so that n…
<title>Spin-polarized electron kinetics under high-intensity picosecond excitation</title>
ABSTRACT Spin-polarized electron kinetics is studied by time-resolved polarized photoemission with picosecond resolution. The re-sponse time of strained layer photocathodes is found to be in a range of a few picosecond offering an ultrafast response andhigh spin-polarization of emitted electrons. The studies of the sub-picosecond spin dynamics are facilitated in high-intensityexcitation regime when the length of the emission pulse is enlarged due to the dispersion of acceleration time and Coulombrepulsion ofthe electrons in their flight in the vacuum.Keywords: optical orientation, spin kinetics, strained semiconductor layer, time-resolved emission. 1. INTRODUCTION GaAs, layers are known to …