0000000001270784
AUTHOR
D. V. Averin
Efficient Peltier refrigeration by a pair of normal metal/ insulator/superconductor junctions
We suggest and demonstrate in experiment that two normal metal /insulator/ superconductor (NIS) tunnel junctions combined in series to form a symmetric SINIS structure can operate as an efficient Peltier refrigerator. Specifically, it is shown that the SINIS structure with normal-state junction resistances 1.0 and 1.1 k$\Omega$ is capable of reaching a temperature of about 100 mK starting from 300 mK. We estimate the corresponding cooling power to be 1.5 pW per total junction area of 0.8 $\mu$m$^2$ at $T= 300$ mK.
Microrefrigeration by NIS tunnel junctions
By using a normal metal-insulator-superconductor (NIS) tunnel junction one can manipulate the Fermi-Dirac distribution of the electrons in the normal electrode. If the junction is biased close to the superconducting gap, Δ, only “hot electrons” above Fermi level can tunnel from the normal electrode to the superconductor. Thus, due to the decoupling of the conduction electrons from the lattice at low temperatures, there exists a possibility to decrease the electronic temperature by this method. Because of the symmetry with bias voltage, two NIS tunnel junctions in series can form an efficient microrefrigerator. Temperature can be measured with two additional junctions by considering the vari…
Adiabatic transport of Cooper pairs in arrays of Josephson junctions
We have developed a quantitative theory of Cooper pair pumping in gated one-dimensional arrays of Josephson junctions. The pumping accuracy is limited by quantum tunneling of Cooper pairs out of the propagating potential well and by direct supercurrent flow through the array. Both corrections decrease exponentially with the number N of junctions in the array, but give a serious limitation of accuracy for any practical array. The supercurrent at resonant gate voltages decreases with N only as sin(v/N)/N, where v is the Josephson phase difference across the array.
Resonant tunneling through a macroscopic charge state in a superconducting SET transistor
We predict theoretically and observe in experiment that the differential conductance of a superconducting SET transistor exhibits a peak which is a complete analogue in a macroscopic system of a standard resonant tunneling peak associated with tunneling through a single quantum state. In particular, in a symmetric transistor, the peak height is universal and equal to $e^2/2\pi \hbar$. Away from the resonance we clearly observe the co-tunneling current which in contrast to the normal-metal transistor varies linearly with the bias voltage.