0000000001298596
AUTHOR
Angelo Alberto Messina
showing 6 related works from this author
Power losses comparison between Silicon Carbide and Silicon devices for an isolated DC-DC converter
2021
In recent years, new efficient power devices have been implemented. Silicon Carbide has replaced silicon as regards the production and the utilization of many devices, such as MOSFETs, diodes, IGBTs and many others. SiC devices are characterized by a low reverse recovery charge, high carrier saturation velocity, by which it is possible to work at high frequency, and high breakdown voltage. Thanks to the great thermal conductivity and the wide bandgap, these devices can operate at high temperature and reach high voltages and currents. What is important to stress is the fact that power losses in SiC devices are lower than the silicon ones. These are the reasons why these devices are utilized …
Nonlinear Robust Control of a Quadratic Boost Converter in a Wide Operation Range, Based on Extended Linearization Method
2022
This paper proposes a control system for a quadratic boost DC/DC converter in a wide range of operations, based on an inner loop with a sliding mode controller, for reaching a desired equilibrium state, and an outer loop with integral-type controller, for assuring robustness against load and input voltage variations and converter parameter uncertainties. The sliding mode controller is designed with the extended linearization method and assures local asymptotic stability, whereas the integral controller is designed using classical frequency methods, and assures input–output stability. It is shown that the proposed controller also deals with the sudden changes in the nominal operating conditi…
Simulation of parasitic effects on Silicon Carbide devices for automotive electric traction
2020
Wide Band Gap (WBG) semiconductors are increasingly addressed towards Electric Vehicle (EV) applications, due to their significant advantages in terms of high-voltage and low-losses performances, suitable for high power applications. Nevertheless, the packaging in WBG devices represents a challenge for designers due to the notable impact that inductive and capacitive parasitic components can bring in high switching frequency regime in terms of noise and power losses. In this paper, a comparison between conventional Silicon (Si) and emerging Silicon-Carbide (SiC) power switching devices is presented. The effects of inductive parasitic effects and switching frequency are investigated in simul…
A prototypal PCB board for the EMI characterization of SiC-based innovative switching devices
2020
In this paper, a preliminary PCB board for the electromagnetic interference (EMI) characterization of innovative silicon-carbide (SiC) based switching devices is presented. Packaging technological issues can determine hurdles in the high-frequency switching and high power regime where wide band gap semiconductors are intended today for Electric Vehicle (EV) applications. In particular, the parasitic inductances that emerge in such devices, must be assessed, by using e.g. EMI techniques. In this specific case, the EMI characterization is supposed to be carried out in a semi-anechoic chamber, available at the University of Palermo (UNIPA), to assess the electromagnetic disturbances according …
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings
2019
This paper reports on the electrical activation and Ohmic contact properties on p-type Al-implanted silicon carbide (4H-SiC). In particular, the contacts were formed on 4H-SiC-implanted layers, subjected to three different post-implantation annealing processes, at 1675 °
Comparison between SiC and GaN switching devices in fast-recharging systems for electric vehicles
2023
Recently, the improvement of the semiconductor devices to achieve higher efficiency and higher power density has risen to interest. Si carbide and gallium nitride offer faster switching frequency and lower losses; however, the knowledge of the behaviour of these devices is not mature. In this paper, a system for fast charging of batteries for electric vehicles based on an isolated DC-DC converter equipped with both SiC and GaN devices is presented and an interesting experimental comparison among these two technologies will be given in terms of dynamic performances, electromagnetic compatibility, stability, efficiency, and so on.