0000000001315835

AUTHOR

Daisy Gomersall

showing 2 related works from this author

Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films

2020

Plasma‐enhanced atomic layer deposition was used to grow non‐stoichiometric nickel oxide thin films with low impurity content, high crystalline quality, and p‐type conductivity. Despite the non‐stoichiometry, the films retained the antiferromagnetic property of NiO.

Materials scienceAnalytical chemistrynickel oxide02 engineering and technologyChemical vapor depositionConductivity01 natural scienceschemical vapor depositionAtomic layer deposition0103 physical scienceslcsh:TA401-492AntiferromagnetismThin film010302 applied physicslcsh:T58.5-58.64kemialliset reaktiotkemialliset ilmiötlcsh:Information technologyNickel oxidesolution depositionatomikerroskasvatus021001 nanoscience & nanotechnologyeye diseasesthin filmsatomic layer depositionlcsh:Materials of engineering and construction. Mechanics of materialssense organsohutkalvot0210 nano-technologyInfoMat
researchProduct

Research data supporting "Antiferromagnetism and p-type conductivity of non-stoichiometric nickel oxide thin films"

2019

Raw data for the manuscript. The dataset contains the files used for the figures and tables in the Article and its Supporting Information. See the Readme file for a detailed description of the dataset.

Thin FilmsNickel OxideChemical Vapor DepositionAtomic Layer DepositionData_FILESSolution Deposition
researchProduct