6533b827fe1ef96bd128682b

RESEARCH PRODUCT

Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films

Tuhin MaityDaisy GomersallJudith L. Macmanus-driscollKai ArstilaAndrew J. FlewittRobert L. Z. HoyeSami KinnunenMari NapariTimo SajavaaraTahmida N. HuqKham M. NiangArmin BarthelJuliet E. Thompson

subject

Materials scienceAnalytical chemistrynickel oxide02 engineering and technologyChemical vapor depositionConductivity01 natural scienceschemical vapor depositionAtomic layer deposition0103 physical scienceslcsh:TA401-492AntiferromagnetismThin film010302 applied physicslcsh:T58.5-58.64kemialliset reaktiotkemialliset ilmiötlcsh:Information technologyNickel oxidesolution depositionatomikerroskasvatus021001 nanoscience & nanotechnologyeye diseasesthin filmsatomic layer depositionlcsh:Materials of engineering and construction. Mechanics of materialssense organsohutkalvot0210 nano-technology

description

Plasma‐enhanced atomic layer deposition was used to grow non‐stoichiometric nickel oxide thin films with low impurity content, high crystalline quality, and p‐type conductivity. Despite the non‐stoichiometry, the films retained the antiferromagnetic property of NiO.

yearjournalcountryeditionlanguage
2020-01-01InfoMat
https://doi.org/10.1002/inf2.12076