Search results for "ohutkalvot"
showing 10 items of 65 documents
Superconducting size effect in thin films under electric field: Mean-field self-consistent model
2019
We consider effects of an externally applied electrostatic field on superconductivity, self-consistently within a BCS mean field model, for a clean 3D metal thin film. The electrostatic change in superconducting condensation energy scales as $\mu^{-1}$ close to subband edges as a function of the Fermi energy $\mu$, and follows 3D scaling $\mu^{-2}$ away from them. We discuss nonlinearities beyond gate effect, and contrast results to recent experiments.
Lämpösähköisen materiaalin lämmönjohtavuuden määrittäminen matalissa lämpötiloissa käyttäen 3ω-menetelmää
2014
Työssä tutkittiin mittausmenetelmää lämmönjohtavuuden määrittämiseen mata- lissa lämpötiloissa. Mittaukset perustuivat 3ω menetelmään, joka on alunperin ohut- kalvoille kehitetty menetelmä lämmönjohtavuuden mittaukseen. Menetelmässä läm- mitinlangan läpi kulkeva vaihtovirta synnyttää kolminkertaisella taajudella olevan jännitteen, jonka avulla saadaan tietoa kappaleen termisistä ominaisuuksista. Mit- tauksissa kultainen lämmitinlanka höyrystettiin Kapton kalvon päälle ja tämän päälle hyvin ohut alumiinioksidikerros. Mittaukset suoritettiin pulssituubijäähdyttimeen ra- kennetussa näytteenpitimessä. Laitteiston toiminta varmistettiin huoneenlämpötilas- sa borosilikaatti- ja Kapton näytteillä.…
Structure and dynamics of CaO films: A computational study of an effect of external static electric field
2017
Oxide films play a significant role in a wide range of industrial fields, mostly due to the thickness-dependent variation of their properties. Recently, it has been proposed based on the experimental study that carrier transport in CaO films proceeds via strong phonon excitations with a variable signal depending on the film thickness. In this paper, we report a detailed investigation in the frame of the density functional theory of structural and electronic properties of freestanding and Mo(100)-supported CaO films, as well as phonons therein, as functions of the film thickness and intensity of the external static electric field. Our calculations demonstrate that phonon frequencies negligib…
Ultrastiff graphene
2021
Graphene has exceptionally high in-plane strength, which makes it ideal for various nanomechanical applications. At the same time, its exceptionally low out-of-plane stiffness makes it also flimsy and hard to handle, rendering out-of-plane structures unstable and difficult to fabricate. Therefore, from an application point of view, a method to stiffen graphene would be highly beneficial. Here we demonstrate that graphene can be significantly stiffened by using a laser writing technique called optical forging. We fabricate suspended graphene membranes and use optical forging to create stable corrugations. Nanoindentation experiments show that the corrugations increase graphene bending stiffn…
Control of Molecular Orbital Ordering Using a van der Waals Monolayer Ferroelectric
2022
Two-dimensional (2D) ferroelectric materials provide a promising platform for the electrical control of quantum states. In particular, due to their 2D nature, they are suitable for influencing the quantum states of deposited molecules via the proximity effect. Here, we report electrically controllable molecular states in phthalocyanine molecules adsorbed on monolayer ferroelectric material SnTe. In particular, we demonstrate that the strain and ferroelectric order in SnTe creates a transition between two distinct orbital orders in the adsorbed phthalocyanine molecules. By controlling the polarization of the ferroelectric domain using scanning tunneling microscopy (STM), we have successfully…
A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films
2020
For large-scale atomic layer deposition (ALD) of alumina, the most commonly used alkyl precursor trimethylaluminum poses safety issues due to its pyrophoric nature. In this work, the authors have investigated a liquid alkoxide, aluminum tri-sec-butoxide (ATSB), as a precursor for ALD deposition of alumina. ATSB is thermally stable and the liquid nature facilitates handling in a bubbler and potentially enables liquid injection toward upscaling. Both thermal and plasma enhanced ALD processes are investigated in a vacuum type reactor by using water, oxygen plasma, and water plasma as coreactants. All processes achieved ALD deposition at a growth rate of 1-1.4 angstrom/cycle for substrate tempe…
In-situ annealing characterization of atomic-layer-deposited Al2O3 in N2, H2 and vacuum atmospheres
2019
Tarkista embargo, kun artikkeli julkaistu. Atomic-layer-deposited Al 2 O 3 films can be used for passivation, protective, and functional purposes in electronic devices. However, as-deposited, amorphous alumina is susceptible to chemical attack and corrosion during manufacturing and field-use. On the contrary, crystalline Al 2 O 3 is resistant against aggressive chemical treatments and corrosion. Here, high-temperature treatments in N 2 , H 2 , and vacuum were used to crystallize alumina which exhibited different crystalline phases. The annealing process was monitored continuously in situ by measuring the film temperature and surface reflectance to understand the crystallization kinetics. Ex…
Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films
2020
Plasma‐enhanced atomic layer deposition was used to grow non‐stoichiometric nickel oxide thin films with low impurity content, high crystalline quality, and p‐type conductivity. Despite the non‐stoichiometry, the films retained the antiferromagnetic property of NiO.
Atomic layer deposition of Ti-Nb-O thin films onto electrospun fibers for fibrous and tubular catalyst support structures
2018
Here, the authors report on the preparation of core-shell carbon-ceramic fibrous as well as ceramic tubular catalyst supports utilizing electrospinning and atomic layer deposition (ALD). In this paper, ALD of Ti-Nb-O thin films using TiCl4, Nb(OEt)5, and H2O as precursors is demonstrated. According to the time-of-flight-elastic recoil detection analysis and Rutherford backscattering spectrometry, carbon and hydrogen impurities were relatively low, but depend on the pulsing ratio of the precursors. Optimized ALD process was used for coating of sacrificial electrospun polyvinyl alcohol (PVA) template fibers to yield tubular Ti-Nb-O structures after thermal or solution based PVA removal. Anoth…
Reaction pathways for atomic layer deposition with lithium hexamethyl disilazide, trimethyl phosphate, and oxygen plasma
2020
Atomic layer deposition (ALD) of lithium-containing films is of interest for the development of next-generation energy storage devices. Lithium hexamethyl disilazide (LiHMDS) is an established precursor to grow these types of films. The LiHMDS molecule can either be used as a single-source precursor molecule for lithium or as a dual-source precursor molecule for lithium and silicon. Single-source behavior of LiHMDS is observed in the deposition process with trimethylphosphate (TMP) resulting in the deposition of crystalline lithium phosphate (Li3PO4). In contrast, LiHMDS exhibits dual-source behavior when combined with O2 plasma, resulting in a lithium silicate. Both processes were characte…