0000000000498553
AUTHOR
Tahmida N. Huq
Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering
The suitability of Ti as a band gap modifier for &alpha
Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films
Plasma‐enhanced atomic layer deposition was used to grow non‐stoichiometric nickel oxide thin films with low impurity content, high crystalline quality, and p‐type conductivity. Despite the non‐stoichiometry, the films retained the antiferromagnetic property of NiO.