0000000000498553

AUTHOR

Tahmida N. Huq

showing 2 related works from this author

Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering

2020

The suitability of Ti as a band gap modifier for &alpha

solar-blind detectionlaajakaistaiset puolijohteetalloyingBand gaplcsh:Mechanical engineering and machineryAnalytical chemistryCorundum02 engineering and technologyengineering.material7. Clean energy01 natural sciencesArticlegallium oxideCrystallinityAtomic layer depositionpuolijohteet0103 physical scienceslcsh:TJ1-1570Electrical and Electronic EngineeringThin filmQCgallium010302 applied physicsCondensed Matter - Materials Sciencewide band gap semiconductorsMechanical EngineeringWide-bandgap semiconductorPhysics - Applied Physicsatomikerroskasvatus021001 nanoscience & nanotechnologybandgapAmorphous solidthin filmstitaaniControl and Systems Engineeringatomic layer depositiongalliumoksidiengineeringSapphireohutkalvotddc:6200210 nano-technology
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Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films

2020

Plasma‐enhanced atomic layer deposition was used to grow non‐stoichiometric nickel oxide thin films with low impurity content, high crystalline quality, and p‐type conductivity. Despite the non‐stoichiometry, the films retained the antiferromagnetic property of NiO.

Materials scienceAnalytical chemistrynickel oxide02 engineering and technologyChemical vapor depositionConductivity01 natural scienceschemical vapor depositionAtomic layer deposition0103 physical scienceslcsh:TA401-492AntiferromagnetismThin film010302 applied physicslcsh:T58.5-58.64kemialliset reaktiotkemialliset ilmiötlcsh:Information technologyNickel oxidesolution depositionatomikerroskasvatus021001 nanoscience & nanotechnologyeye diseasesthin filmsatomic layer depositionlcsh:Materials of engineering and construction. Mechanics of materialssense organsohutkalvot0210 nano-technologyInfoMat
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