6533b821fe1ef96bd127c377
RESEARCH PRODUCT
Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering
Martin FrentrupTimo SajavaaraTahmida N. HuqMari NapariMari NapariFabien MassabuauFabien MassabuauAndrás KovácsRachel A. OliverPaul R. ChalkerArmin BarthelJ.w. Robertssubject
solar-blind detectionlaajakaistaiset puolijohteetalloyingBand gaplcsh:Mechanical engineering and machineryAnalytical chemistryCorundum02 engineering and technologyengineering.material7. Clean energy01 natural sciencesArticlegallium oxideCrystallinityAtomic layer depositionpuolijohteet0103 physical scienceslcsh:TJ1-1570Electrical and Electronic EngineeringThin filmQCgallium010302 applied physicsCondensed Matter - Materials Sciencewide band gap semiconductorsMechanical EngineeringWide-bandgap semiconductorPhysics - Applied Physicsatomikerroskasvatus021001 nanoscience & nanotechnologybandgapAmorphous solidthin filmstitaaniControl and Systems Engineeringatomic layer depositiongalliumoksidiengineeringSapphireohutkalvotddc:6200210 nano-technologydescription
The suitability of Ti as a band gap modifier for &alpha
year | journal | country | edition | language |
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2020-12-20 |