0000000001319405
AUTHOR
Shilei Ding
Interfacial Dzyaloshinskii-Moriya interaction and chiral magnetic textures in a ferrimagnetic insulator
The interfacial Dzyaloshinskii-Moriya interaction (DMI) in multilayers of heavy metal and ferromagnetic metals enables the stabilization of novel chiral spin structures such as skyrmions. Magnetic insulators, on the other hand can exhibit enhanced dynamics and properties such as lower magnetic damping and therefore it is of interest to combine the properties enabled by interfacial DMI with insulating systems. Here, we demonstrate the presence of interfacial DMI in heterostructures that include insulating magnetic layers. We use a bilayer of perpendicularly magnetized insulating thulium iron garnet (TmIG) and the heavy metal platinum, and find a surprisingly strong interfacial DMI that, comb…
Identifying the origin of the nonmonotonic thickness dependence of spin-orbit torque and interfacial Dzyaloshinskii-Moriya interaction in a ferrimagnetic insulator heterostructure
Electrical manipulation of magnetism via spin-orbit torques (SOTs) promises efficient spintronic devices. In systems comprising magnetic insulators and heavy metals, SOTs have started to be investigated only recently, especially in systems with interfacial Dzyaloshinskii-Moriya interaction (iDMI). Here, we quantitatively study the SOT efficiency and iDMI in a series of gadolinium gallium garnet (GGG) / thulium iron garnet (TmIG) / platinum (Pt) heterostructures with varying TmIG and Pt thicknesses. We find that the non-monotonic SOT efficiency as a function of the magnetic layer thickness is not consistent with the 1/thickness dependence expected from a simple interfacial SOT mechanism. Mor…
Identification of Néel vector orientation in antiferromagnetic domains switched by currents in NiO/Pt thin films
Understanding the electrical manipulation of antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequency. Focusing on collinear insulating antiferromagnetic NiO/Pt thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the N\'eel vector direction changes. We demonstrate electrical switching between different T-domains by current pulses, finding that the N\'eel vector orientation in these domains is along $[\pm5\ \pm5\ 19]$, different compared to the bulk $$ directions. The final state of the N\'eel vector $\textbf{n}$ switching after current pulse…
An insulating doped antiferromagnet with low magnetic symmetry as a room temperature spin conduit
We report room temperature long-distance spin transport of magnons in antiferromagnetic thin film hematite doped with Zn. The additional dopants significantly alter the magnetic anisotropies, resulting in a complex equilibrium spin structure that is capable of efficiently transporting spin angular momentum at room temperature without the need for a well-defined, pure easy-axis or easy-plane anisotropy. We find intrinsic magnon spin-diffusion lengths of up to 1.5 {\mu}m, and magnetic domain governed decay lengths of 175 nm for the low frequency magnons, through electrical transport measurements demonstrating that the introduction of non-magnetic dopants does not strongly reduce the transport…
Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO3 thin films by spin Hall magnetoresistance
TmFeO$_3$ (TFO) is a canted antiferromagnet that undergoes a spin reorientation transition (SRT) with temperature between 82 K and 94 K in single crystals. In this temperature region, the N\'eel vector continuously rotates from the crystallographic $c$-axis (below 82 K) to the $a$-axis (above 94 K). The SRT allows for a temperature control of distinct antiferromagnetic states without the need for a magnetic field, making it apt for applications working at THz frequencies. For device applications, thin films of TFO are required as well as an electrical technique for reading out the magnetic state. Here we demonstrate that orthorhombic TFO thin films can be grown by pulsed laser deposition an…
Identification of Néel Vector Orientation in Antiferromagnetic Domains Switched by Currents in NiO/Pt Thin Films
Understanding the electrical manipulation of the antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequencies. Focusing on collinear insulating antiferromagnetic $\mathrm{Ni}\mathrm{O}/\mathrm{Pt}$ thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the N\'eel-vector direction changes. We demonstrate electrical switching between different T domains by current pulses, finding that the N\'eel-vector orientation in these domains is along [$\ifmmode\pm\else\textpm\fi{}5$ $\ifmmode\pm\else\textpm\fi{}5$ 19], different compared to the bulk $⟨112⟩$ d…
Magnetic Coupling in Y3Fe5O12/Gd3Fe5O12 Heterostructures
Ferrimagnetic ${\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$ (YIG) is the prototypical material for studying magnonic properties due to its exceptionally low damping. By substituting the yttrium with rare earth elements that have a net magnetic moment, we can introduce an additional spin degree of freedom. Here, we study the magnetic coupling in epitaxial ${\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$/${\mathrm{Gd}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$ (YIG/GIG) heterostructures grown by pulsed laser deposition. From bulk sensitive magnetometry and surface sensitive spin Seebeck effect and spin Hall magnetoresistance measurements, we determine the alignment of the heterostruct…
Harnessing Orbital-to-Spin Conversion of Interfacial Orbital Currents for Efficient Spin-Orbit Torques.
The system generates two errors of "Bad character(s) in field Abstract" for no reason. Please refer to the manuscript for the full abstract.
Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO3 thin films by spin Hall magnetoresistance
$\mathrm{Tm}\mathrm{Fe}{\mathrm{O}}_{3}$ (TFO) is a canted antiferromagnet that undergoes a spin reorientation transition (SRT) with temperature between 82 and 94 K in single crystals. In this temperature region, the N\'eel vector continuously rotates from the crystallographic $c$ axis (below 82 K) to the $a$ axis (above 94 K). The SRT allows for a temperature control of distinct antiferromagnetic states without the need for a magnetic field, making it apt for applications working at terahertz frequencies. For device applications, thin films of TFO are required as well as an electrical technique for read-out of the magnetic state. Here, we demonstrate that orthorhombic TFO thin films can be…
Data for the article "An insulating doped antiferromagnet with low magnetic symmetry as a room temperature spin conduit "
Data for the article "An insulating doped antiferromagnet with low magnetic symmetry as a room temperature spin conduit " (https://aip.scitation.org/doi/full/10.1063/5.0032940 and https://arxiv.org/abs/2011.09755)