Noise features in InP semiconductors operating under static or sub-Terahertz electric fields

The sensitivity of semiconductor based circuits is strongly affected by the presence of intrinsic noise, which limits the performance of electronic devices. For this reason, several studies have investigated and characterized the transport properties of hot-electrons in semiconductor structures, by analyzing the electronic noise in systems operating under static and/or large-signal periodic driving conditions. Previous studies on electron velocity fluctuations in III-V and covalent semiconductor crystals, driven by periodic electric fields, have shown that the total noise power depends on both the amplitude and the frequency of the excitation signals. On the other hand, to the best of our k…