6533b7cefe1ef96bd1256f7b
RESEARCH PRODUCT
Photoluminescence of Ga-face AlGaN/GaN single heterostructures
Martin StutzmannAndrés CantareroAna CrosRoman DimitrovOliver AmbacherG. Martı́nez-criadoC. R. Miskyssubject
PhotoluminescenceMaterials scienceCondensed matter physicsCondensed Matter::OtherMechanical EngineeringExcitonHeterojunctionCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsCondensed Matter::Materials ScienceMechanics of MaterialsGeneral Materials ScienceSpontaneous emissionFermi gasLuminescenceExcitationRecombinationdescription
Abstract The radiative recombination in Ga-face Al 0.30 Ga 0.70 N/GaN single heterostructures (SHs) was studied by photoluminescence (PL) measurements. An energy shift of the excitonic transitions toward higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. In addition to these exciton lines, a broad band energetically localized between the exciton lines and the LO-phonon replica was noticed in the undoped SH. From its energy position, excitation power dependence, as well as temperature behaviour, we have attributed this luminescence to the H -band (HB), which is representative of the two-dimensional electron gas (2DEG) recombination.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2001-05-01 | Materials Science and Engineering: B |