6533b7cefe1ef96bd125783f
RESEARCH PRODUCT
Excitonic Transitions in Homoepitaxial GaN
Oliver AmbacherG. Martı́nez-criadoAna CrosMartin StutzmannC. R. MiskysAndrés Cantarerosubject
PhotoluminescenceCondensed matter physicsChemistryExcitonAtmospheric temperature rangeCondensed Matter PhysicsSpectral lineElectronic Optical and Magnetic Materialslaw.inventionCondensed Matter::Materials Sciencesymbols.namesakeQuality (physics)lawsymbolsMetalorganic vapour phase epitaxyRaman spectroscopyBose–Einstein condensatedescription
The photoluminescence spectrum of a high quality homoepitaxial GaN film has been measured as a function of temperature. As temperature increases the recombination of free excitons dominates the spectra. Their energy shift has successfully fitted in that temperature range by means of the Bose-Einstein expression instead of Varshni's relationship. Values for the parameters of both semi-empirical relations describing the energy shift are reported and compared with the literature.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2001-11-01 | physica status solidi (b) |