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RESEARCH PRODUCT
Short-range order and luminescence in amorphous silicon oxynitride
P.a. PundurVladimir A. GritsenkoHei WongW. M. KwokYu.g. Shavalginsubject
Amorphous siliconchemistry.chemical_compoundPhotoluminescenceUnpaired electronchemistryChemical bondX-ray photoelectron spectroscopyGeneral Chemical EngineeringBinding energyAnalytical chemistryGeneral Physics and AstronomyCathodoluminescenceLuminescencedescription
Abstract Using Si 2p core-level X-ray photoelectron spectroscopy, we found that the short-range order in amorphous silicon oxynitride (a-SiOxNy) can be quantitatively described by a random bonding model. Results also show that the second and even further neighbours of the Si in the network affect the chemical shifts of the X-ray photoelectron spectra. Cathodoluminescence and photoluminescence of a-SiOxNy with different compositions are also measured. A red band with energies of 1.8–1.9 eV, a blue band with an energy of 2.7 eV and ultraviolet bands with energies of 13.1, 3.4–3.6, 4.4–4.7 and 5.4eV were observed. The 1.8–1.9 eV band is attributed to the O and N atoms with an unpaired electron and the 2.7 eV band is attributed to the twofold-coordinated Si atom with two electrons (sililene centre). The ultraviolet bands are assumed to be related in the Si[sbnd]Si bonds.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2000-10-01 | Philosophical Magazine B |