0000000000060805
AUTHOR
Yu.g. Shavalgin
showing 2 related works from this author
Short-range order and luminescence in amorphous silicon oxynitride
2000
Abstract Using Si 2p core-level X-ray photoelectron spectroscopy, we found that the short-range order in amorphous silicon oxynitride (a-SiOxNy) can be quantitatively described by a random bonding model. Results also show that the second and even further neighbours of the Si in the network affect the chemical shifts of the X-ray photoelectron spectra. Cathodoluminescence and photoluminescence of a-SiOxNy with different compositions are also measured. A red band with energies of 1.8–1.9 eV, a blue band with an energy of 2.7 eV and ultraviolet bands with energies of 13.1, 3.4–3.6, 4.4–4.7 and 5.4eV were observed. The 1.8–1.9 eV band is attributed to the O and N atoms with an unpaired electron…
Cathodoluminescence and photoluminescence study of trap centers in amorphous silicon oxynitride
2002
Amorphous silicon oxynitride (a-SiO/sub x/N/sub y/) films with different compositions were prepared using low-pressure chemical vapor deposition (LPCVD) technique, The cathodoluminescence and photoluminescence of this samples were measured from the red band to the ultraviolet band to study the trap centers in silicon oxynitride. A 1.8-1.9 eV band was found and is attributed to the oxygen and nitrogen atoms with unpaired electrons whereas the 2.7 eV band is attributed to two-fold coordinated silicon atoms with two electrons. The 5.4 eV shoulder is due to the peroxy radicals and other ultraviolet bands are supposed to due due to the Si-Si bonds.