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RESEARCH PRODUCT

Cathodoluminescence and photoluminescence study of trap centers in amorphous silicon oxynitride

W.m. LauHei WongP.a. PundurVladimir A. GritsenkoYu.g. Shavalgin

subject

inorganic chemicalsAmorphous siliconMaterials sciencePhotoluminescenceSilicon oxynitrideSiliconNanocrystalline siliconAnalytical chemistrychemistry.chemical_elementCathodoluminescenceChemical vapor depositionmedicine.disease_causechemistry.chemical_compoundchemistrymedicineUltraviolet

description

Amorphous silicon oxynitride (a-SiO/sub x/N/sub y/) films with different compositions were prepared using low-pressure chemical vapor deposition (LPCVD) technique, The cathodoluminescence and photoluminescence of this samples were measured from the red band to the ultraviolet band to study the trap centers in silicon oxynitride. A 1.8-1.9 eV band was found and is attributed to the oxygen and nitrogen atoms with unpaired electrons whereas the 2.7 eV band is attributed to two-fold coordinated silicon atoms with two electrons. The 5.4 eV shoulder is due to the peroxy radicals and other ultraviolet bands are supposed to due due to the Si-Si bonds.

yearjournalcountryeditionlanguage
2002-11-072000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)
https://doi.org/10.1109/icmel.2000.840567