6533b7d0fe1ef96bd125a154
RESEARCH PRODUCT
Absorption and luminescence in amorphous SixGe1-xO2 films fabricated by SPCVD
Konstantin M. GolantAnatoly N. TrukhinJanis Teterissubject
Materials sciencePhotoluminescenceSiliconExcimer lasermedicine.medical_treatmentchemistry.chemical_elementSubstrate (electronics)Chemical vapor depositionCondensed Matter PhysicsPhotochemistryElectronic Optical and Magnetic MaterialsAmorphous solidchemistryMaterials ChemistryCeramics and CompositesmedicineLuminescenceAbsorption (electromagnetic radiation)description
Abstract Optical absorption and photoluminescence of Ge-doped silica films fabricated by the surface-plasma chemical vapor deposition (SPCVD) are studied in the 2–8 eV spectral band. The deposited on silica substrate films of about 10 μm in thickness are composed as x·GeO2-(1-x)·SiO2 with x ranging from 0.02 to 1. It is found that all as‐deposited films do not luminesce under the excitation by a KrF (5 eV) excimer laser, thus indicating lack of oxygen deficient centers (ODCs) in them. After subsequent fusion of silicon containing (x
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2012-07-01 | Journal of Non-Crystalline Solids |