6533b7d1fe1ef96bd125cab2
RESEARCH PRODUCT
Cooling of Hot Electrons in Amorphous Silicon
Regis VanderhaghenDaniele HulinS. CuzeauJ. O. Whitesubject
Amorphous siliconeducation.field_of_studyMaterials scienceCondensed matter physicsSiliconPopulationNanocrystalline siliconchemistry.chemical_elementElectronchemistry.chemical_compoundCrystallographychemistryLattice (order)Charge carrierCrystalline siliconeducationdescription
ABSTRACTMeasurements of the cooling rate of hot carriers in amorphous silicon are made with a two-pump, one-probe technique. The experiment is simulated with a rate-equation model describing the energy transfer between a population of hot carriers and the lattice. An energy transfer rate proportional to the temperature difference is found to be consistent with the experimental data while an energy transfer independent of the temperature difference is not. This contrasts with the situation in crystalline silicon. The measured cooling rates are sufficient to explain the difficulty in observing avalanche effects in amorphous silicon.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1997-01-01 | MRS Proceedings |