6533b7d1fe1ef96bd125d684
RESEARCH PRODUCT
Optical properties of Ge-oxygen defect center embedded in silica films
Simonpietro AgnelloMarco CannasEliana QuartaroneFabrizio MessinaRoberto BoscainoStefania Grandisubject
Condensed Matter - Materials SciencePhotoluminescenceGermaniumSputteringOptical spectroscopyDefectsAbsorptionLuminescenceGermaniaSilicaDopingMaterials Science (cond-mat.mtrl-sci)FOS: Physical scienceschemistry.chemical_elementGermaniumDisordered Systems and Neural Networks (cond-mat.dis-nn)Atmospheric temperature rangeCondensed Matter - Disordered Systems and Neural NetworksCondensed Matter PhysicsPhotochemistryMolecular physicsElectronic Optical and Magnetic MaterialsCondensed Matter::Materials ScienceIntersystem crossingchemistryMaterials ChemistryCeramics and CompositesSinglet stateTriplet stateLuminescencedescription
The photo-luminescence features of Ge-oxygen defect centers in a 100nm thick Ge-doped silica film on a pure silica substrate were investigated by looking at the emission spectra and time decay detected under synchrotron radiation excitation in the 10-300 K temperature range. This center exhibits two luminescence bands centered at 4.3eV and 3.2eV associated with its de-excitation from singlet (S1) and triplet (T1) states, respectively, that are linked by an intersystem crossing process. The comparison with results obtained from a bulk Ge-doped silica sample evidences that the efficiency of the intersystem crossing rate depends on the properties of the matrix embedding the Ge-oxygen defect centers, being more effective in the film than in the bulk counterpart.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2007-01-01 |