6533b7d2fe1ef96bd125e3a2

RESEARCH PRODUCT

CHANGES OF ELECTRONIC NOISE INDUCED BY OSCILLATING FIELDS IN BULK GaAs SEMICONDUCTORS

Michelangelo ZarconeM. C. CapizzoD. Persano Adorno

subject

PhysicsElectronic noiseCyclostationary processGeneral MathematicsMonte Carlo methodQuantum noiseShot noiseField-mixing conditionGeneral Physics and AstronomySpectral densityNoise (electronics)Settore FIS/03 - Fisica Della MateriaComputational physicsElectric fieldFlicker noiseStatistical physicsMonte Carlo simulation

description

A Monte Carlo study of hot-electron intrinsic noise in a n-type GaAs bulk driven by one or two mixed cyclostationary electric fields is presented. The noise properties are investigated by computing the spectral density of velocity fluctuations. An analysis of the noise features as a function of the amplitudes and frequencies of two applied fields is presented. Numerical results show that it is possible to reduce the intrinsic noise. The best conditions to realize this effect are discussed.

yearjournalcountryeditionlanguage
2008-03-01Fluctuation and Noise Letters
https://doi.org/10.1142/s0219477508004222