Wave-mixing effects on electronic noise in semiconductors

The results of a Monte Carlo analysis of hot-electron intrinsic noise in a n-type GaAs bulk driven by two mixed large-amplitude alternating electric fields having frequency in the subterahertz range are presented. The noise properties are investigated by studying the velocity autocorrelation function and the noise spectrum. We explored the relations among the frequency response and the velocity fluctuations as a function of the frequencies and intensities of the mixed fields. When the semiconductor is driven by two mixed ciclostationary electric fields, a resonant-like enhancement of the spectra near the two frequencies of the applied fields is found.

CHANGES OF ELECTRONIC NOISE INDUCED BY OSCILLATING FIELDS IN BULK GaAs SEMICONDUCTORS

A Monte Carlo study of hot-electron intrinsic noise in a n-type GaAs bulk driven by one or two mixed cyclostationary electric fields is presented. The noise properties are investigated by computing the spectral density of velocity fluctuations. An analysis of the noise features as a function of the amplitudes and frequencies of two applied fields is presented. Numerical results show that it is possible to reduce the intrinsic noise. The best conditions to realize this effect are discussed.

Monte Carlo analysis of electronic noise in semiconductors under sub‐terahertz cyclostationary mixed fields

This paper reports the results of Monte Carlo simulations of electronic noise in a GaAs bulk driven by two mixed high-frequency large-amplitude periodic electric fields. Under these conditions, the system response shows some peculiarities in the noise performance, such as a resonant-like enhancement of the spectra near the two frequencies of the applied fields. The relations among the frequency response and the velocity fluctuations as a function of intensities and frequencies of the sub-terahertz mixed excitation fields have been investigated. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Dynamical effects and Terahertz harmonic generation in low-doped bulk semiconductors and submicron structures

We present results obtained using a three-dimensional multivalleys Monte Carlo (MC) model to simulate the nonlinear carrier dynamics under the influence of an intense sub-terahertz electric field in a doped bulk semiconductor. By self-consistently coupling a one-dimensional Poisson solver to the ensemble MC code we simulate also the nonlinear carrier dynamics in n+nn+ structures operating under large-amplitude periodic signals and investigate the voltage-current characteristic hysteresis cycle and the high-order harmonic efficiency. For both cases we discuss the dependence of the nonlinearities and of the harmonic generation efficiency on the frequency and the intensity of the alternating s…

Monte Carlo Analysis of Voltage-Current Characteristic Nonlinearity and Harmonic Generation in Submicron Semiconductor Structures

Using a multiparticles Monte Carlo technique, we investigate the dependence of the nonlinear carrier dynamics in GaAs n+nn+ structures operating under very intense sub-terahertz signals from some process parameters as: i) the frequency and the intensity of the excitation signal and ii) the length of the n region

A PEDAGOGICAL APPROACH TO MODELLING ELECTRIC CONDUCTION IN SOLIDS

Electric conduction in solids: a pedagogical approach supported by laboratory measurements and computer modelling environments

In this paper we present a pedagogic approach aimed at modeling electric conduction in semiconductors, built by using NetLogo, a programmable modeling environment for building and exploring multi‐agent systems. ‘Virtual experiments’ are implemented to confront predictions of different microscopic models with real measurements of electric properties of matter, such as resistivity. The relations between these electric properties and other physical variables, like temperature, are, then, analyzed.

Field mixing influence on the hot-electron noise in Semiconductors

Monte Carlo Simulation of Harmonic Generation in GaAs structures operating under large-signal Conditions

By using a multiparticles Monte Carlo technique, with a self-consistently coupled one-dimensional Poisson solver, we investigate the dependence of the nonlinear carrier dynamics in GaAs n+nn+ micro e submicro-structures operating under very intense sub-terahertz signals by: (i) the frequency and the intensity of the excitation signal and (ii) the length of the n region.

Electric conduction in semiconductors: a pedagogical model based on the Monte Carlo method

We present a pedagogic approach aimed at modelling electric conduction in semiconductors in order to describe and explain some macroscopic properties, such as the characteristic behaviour of resistance as a function of temperature. A simple model of the band structure is adopted for the generation of electron–hole pairs as well as for the carrier transport in moderate electric fields. The semiconductor behaviour is described by substituting the traditional statistical approach (requiring a deep mathematical background) with microscopic models, based on the Monte Carlo method, in which simple rules applied to microscopic particles and quasi-particles determine the macroscopic properties. We …

Frequency influence on the hot-electron noise reduction in GaAs operating under periodic signals

A Monte Carlo study of the role of the frequency on the hot-electron intrinsic noise reduction in an n-type GaAs bulk driven by two mixed cyclostationary electric fields is presented. Previous numerical results showed the possibility to reduce the diffusion noise under specific wave-mixing conditions. In this work the variations of the noise properties are investigated by computing and integrating the spectral density of the velocity fluctuations. We found that the effect of reduction of the noise level due to the addition of a second field at twice frequency is almost independent of the frequency.

The impact of the pre-instructional cognitive profile on learning gain and final exam of physics courses: a case study.

The case study described in this paper investigates the relationship among some pre-instructional knowledge, the learning gain and the final physics performance of computing engineering students in the introductory physics course. The results of the entrance engineering test (EET) have been used as a measurement of reading comprehension, logic and mathematics skills and basic physics knowledge of a sample of 47 Computing Engineering freshmen at the University of Palermo (Italy). These data give a significant picture of the initial knowledge status of a student choosing engineering studies. The students' physics learning gain has been calculated using a standardized tool in mechanics: the fo…

Diffusion of neutrons by a slab of moderating material: an application of the Monte Carlo Method

An application of the Monte Carlo method to the diffusion of neutrons passing through a slab of a moderating material is presented. This method can be used as a tool to improve the student's comprehension of the statistical properties of many particle systems, showing the necessity of simulation procedures to obtain information on the expected results of real experiments. We have chosen a very simple example to illustrate it: the evaluation of the transmission, reflection and absorption probabilities of a monochromatic beam of neutrons diffusing through a slab of a moderator material. After a collision with a nucleus of the moderator the neutron may be either elastically scattered or captur…

ToL in the Engineering Faculty of Palermo University