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RESEARCH PRODUCT
Dynamical effects and Terahertz harmonic generation in low-doped bulk semiconductors and submicron structures
M. C. CapizzoMichelangelo ZarconeD. Persano Adornosubject
PhysicsNonlinear systemHysteresisSemiconductorCondensed matter physicsbusiness.industryTerahertz radiationElectric fieldMonte Carlo methodHarmonicHigh harmonic generationCondensed Matter Physicsbusinessdescription
We present results obtained using a three-dimensional multivalleys Monte Carlo (MC) model to simulate the nonlinear carrier dynamics under the influence of an intense sub-terahertz electric field in a doped bulk semiconductor. By self-consistently coupling a one-dimensional Poisson solver to the ensemble MC code we simulate also the nonlinear carrier dynamics in n+nn+ structures operating under large-amplitude periodic signals and investigate the voltage-current characteristic hysteresis cycle and the high-order harmonic efficiency. For both cases we discuss the dependence of the nonlinearities and of the harmonic generation efficiency on the frequency and the intensity of the alternating signal. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
year | journal | country | edition | language |
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2006-07-25 |