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RESEARCH PRODUCT
Surface passivation of gallium selenide by nitrogen implantation
F. MárquezG. GonzálezV. MuñozA. Segurasubject
PassivationGallium selenideInorganic chemistrychemistry.chemical_elementSurfaces and InterfacesGeneral ChemistryCondensed Matter PhysicsNitrogenSurfaces Coatings and FilmsIonIon implantationchemistryX-ray photoelectron spectroscopyMaterials ChemistrySurface structureOpen airdescription
In this paper we report on the characterization of nitrogen-implanted single-crystal GaSe samples. Nitrogen atoms were implanted at 80 keV, with doses ranging from 4 × 10 13 to 10 15 N + ions cm -2 . Next, samples were aged in open air and characterized by small-area XPS, together with an unimplanted clean surface, in order to quantify the effects of the nitrogen implantation. In general, we found that the oxidation was fully prevented in N + -implanted samples.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2002-08-01 | Surface and Interface Analysis |