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RESEARCH PRODUCT

Associative Memory Based on Double-Gating of Molecularly Linked Nanosystem Arrays:  A Theoretical Scheme

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We discuss theoretically the properties of an associative memory (a system that can retrieve a stored pattern that is similar to the input pattern) based on the ideal conductive properties of a molecularly linked nanosystem array. Two schemes are considered for the memory based on the gate potential modulation of the drain-source current through the array. In the first scheme, the basic units of the electric circuit are nanosystems (e.g., nanoparticles) arranged in a series array. Each nanosystem is assumed to have two states of conductances, GM and Gm (GM ≫ Gm), that can be tuned externally by the gate and backgate potentials. The bit sequence associated with a given pattern is stored as the components of a voltage vector. The input vector components are the gate voltages, and the stored vector components are the backgate voltages. The input pattern is compared with a given stored pattern by double-gating each nanosystem in the array with the respective components of the two vectors (the number of arrays...