6533b7d4fe1ef96bd1262838
RESEARCH PRODUCT
Optimization of impurity profile for p-n junction in heterostructures
Bernardo SpagnoloE. L. Pankratovsubject
Diffusion equationMaterials scienceDopantCondensed matter physicsEpitaxial layerAnnealing (metallurgy)radiation defectsHeterojunctionCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsCondensed Matter::Materials ScienceImpurityCondensed Matter::SuperconductivityHomogeneity (physics)Effective diffusion coefficientHeterojunctionp–n junctionOptimization of impuritydescription
We analyze the dopant diffusion in p-n-junction in heterostructure, by solving the diffusion equation with space-varying diffusion coefficient. For a step-wise spatial distribution we find the optimum annealing time to decrease the p-n-junction thickness and to increase the homogeneity of impurity concentration in p or n regions.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2005-07-01 |