0000000000234691

AUTHOR

E. L. Pankratov

showing 1 related works from this author

Optimization of impurity profile for p-n junction in heterostructures

2005

We analyze the dopant diffusion in p-n-junction in heterostructure, by solving the diffusion equation with space-varying diffusion coefficient. For a step-wise spatial distribution we find the optimum annealing time to decrease the p-n-junction thickness and to increase the homogeneity of impurity concentration in p or n regions.

Diffusion equationMaterials scienceDopantCondensed matter physicsEpitaxial layerAnnealing (metallurgy)radiation defectsHeterojunctionCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsCondensed Matter::Materials ScienceImpurityCondensed Matter::SuperconductivityHomogeneity (physics)Effective diffusion coefficientHeterojunctionp–n junctionOptimization of impurity
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