6533b7d4fe1ef96bd126321f
RESEARCH PRODUCT
Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon
Lydie DuaTom CassidyFabrice SemondDaniel PoitrasJean-luc ReverchonBenjamin DamilanoPierre LegagneuxR. DudekNicolas GrandjeanMauro MoscaJean MassiesNadia Brière De L’isleJean-yves Dubozsubject
Materials sciencePhysics and Astronomy (miscellaneous)Physics::Instrumentation and DetectorsGeneral Physics and AstronomyPhysics::OpticsGallium nitrideSubstrate (electronics)Light emitting diodeFILMSSettore ING-INF/01 - Elettronicalaw.inventionchemistry.chemical_compoundCondensed Matter::Materials ScienceOpticsEtching (microfabrication)lawDielectric mirrorDielectric mirrorQuantum wellbusiness.industryGeneral EngineeringMembraneGallium nitrideDistributed Bragg reflectorlight emitting diodesComputer Science::OtherchemistryOptoelectronicsWAVELASERbusinessMicrocavityMolecular beam epitaxyLight-emitting diodeMolecular beam epitaxySAPPHIREdescription
Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by molecular beam epitaxy on Si (111). We fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (Ta2O5/SiO2) mirror deposition. The electroluminescence spectra show that the emission within the distributed Bragg reflector stop band is enhanced in the membrane microcavity. The cavity modes are broadened by some cavity length non-uniformity that is introduced when the GaN is back etched to adjust the cavity length. This process does not need any transfer on an intermediate host substrate and is fully compatible with large area semiconductor processing.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2003-01-15 |