6533b7d4fe1ef96bd12634ee
RESEARCH PRODUCT
Alkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et3Si)3As through the GaAs process
Tiina SarnetTimo HatanpääMikko RitalaKenichiro MizohataTimo SajavaaraMarkku LeskeläMikko Laitinensubject
compound semiconductorsMaterials scienceAnnealing (metallurgy)Analytical chemistry02 engineering and technology010402 general chemistryEpitaxy01 natural sciencesArsenidelaw.inventionAtomic layer depositionchemistry.chemical_compoundGallium arsenideImpuritylawMaterials ChemistryThin filmCrystallizationta216ta116ta114General Chemistry021001 nanoscience & nanotechnology0104 chemical sciencesAmorphous solidamorphous filmschemistry0210 nano-technologystoichiometric filmsdescription
A new chemistry has been developed to deposit GaAs, the quintessential compound semiconductor. The ALD process is based on a dechlorosilylation reaction between GaCl3 and (Et3Si)3As. Characteristic ALD growth was demonstrated, indicating good applicability of the alkylsilyl arsenide precursor. ALD of GaAs produced uniform, amorphous and stoichiometric films with low impurity content. This was done with saturating growth rates and an easily controlled film thickness. Crystallization was achieved by annealing. Even though the growth rate strongly decreased with increasing deposition temperature, good quality film growth was demonstrated at 175 to 200 °C, indicating the presence of an ALD window.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2016-01-01 | Journal of Materials Chemistry C |