6533b7d5fe1ef96bd1263b64
RESEARCH PRODUCT
Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions
Yu. A. PashkinJukka P. PekolaLeonid Kuzminsubject
Materials scienceFabricationChromium Compoundsbusiness.industryBilayerGeneral Engineeringchemistry.chemical_elementNanotechnologyEvaporation (deposition)ChromiumResistchemistryOptoelectronicsbusinessLithographyElectron-beam lithographydescription
We fabricated chromium based single-electron transistors comprising small-area Cr/CrOx/Cr tunnel junctions with an evaporated chromium oxide barrier. The transistors are fabricated using e-beam lithography with a bilayer resist and two-angle shadow evaporation. We describe the fabrication process and discuss the device characteristics.
year | journal | country | edition | language |
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1999-01-01 | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures |