0000000000246523

AUTHOR

Leonid Kuzmin

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Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions

1999

We fabricated chromium based single-electron transistors comprising small-area Cr/CrOx/Cr tunnel junctions with an evaporated chromium oxide barrier. The transistors are fabricated using e-beam lithography with a bilayer resist and two-angle shadow evaporation. We describe the fabrication process and discuss the device characteristics.

Materials scienceFabricationChromium Compoundsbusiness.industryBilayerGeneral Engineeringchemistry.chemical_elementNanotechnologyEvaporation (deposition)ChromiumResistchemistryOptoelectronicsbusinessLithographyElectron-beam lithographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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