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RESEARCH PRODUCT
Above-bandgap ordinary optical properties of GaSe single crystal
V. Muñoz SanjoséC. Martinez-tomasD. H. LeviSukgeun Choisubject
EllipsometryCondensed matter physicsChemistryBand gapUNESCO::FÍSICAGallium compoundsRefractive indexCritical points ; Dielectric function ; Ellipsometry ; Energy gap ; Gallium compounds ; III-VI semiconductors ; Refractive indexIII-VI semiconductorsPhysics::OpticsGeneral Physics and AstronomyCritical pointsDielectric functionPolarization (waves)Spectral lineEnergy gapOptical axis:FÍSICA [UNESCO]EllipsometryPerpendicularRefractive indexSingle crystaldescription
We report above-bandgap ordinary optical properties of ε-phase GaSe single crystal. Reference-quality pseudodielectric function 〈ε(E)〉 = 〈ε1(E)〉+i〈ε2(E)〉 and pseudorefractive index 〈N(E)〉 = 〈n(E)〉+i〈k(E)〉 spectra were measured by spectroscopic ellipsometry from 0.73 to 6.45 eV at room temperature for the light polarization perpendicular to the optic axis (math⊥math). The 〈ε〉 spectrum exhibited several interband-transition critical-point structures. Analysis of second-energy derivatives calculated numerically from the measured data yielded the critical-point energy values. Carmen.Martinez-Tomas@uv.es
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2009-09-01 | Journal of Applied Physics |