6533b7d5fe1ef96bd126496f
RESEARCH PRODUCT
HEMT for low-noise microwaves: CAD-oriented performance evaluation
Patrizia LivreriB. Di MaioGiuseppe Capponisubject
EngineeringRadiationbusiness.industryAmplifierTransistorElectrical engineeringCADCondensed Matter PhysicHigh-electron-mobility transistorCondensed Matter Physicscomputer.software_genreSettore ING-INF/01 - ElettronicaSignallaw.inventionlawElectronic engineeringFigure of meritComputer Aided DesignElectrical and Electronic EngineeringbusinesscomputerMicrowavedescription
This paper shows how a graphic processing of low-noise HEMT's small signal parameters, allows evaluating and comparing the actual performance obtainable in front-end applications. HEMT's tradeoff charts which solve tradeoffs among the basic low-noise amplifier performance are reported. Figures of merit for microwave low-noise HEMT which represent a fast way of evaluating HEMT in actual working conditions and of selecting the proper transistor, are defined. As an example, the tradeoff charts and the figures of merit of two HEMT's (Fujitsu FHR02FH, Sony 2SK677) and a pseudomorphic-HEMT (Celeritek CFB001-03) are reported and compared with the data sheets. © 1995, IEEE. All rights reserved.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1995-06-01 | IEEE Transactions on Microwave Theory and Techniques |