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RESEARCH PRODUCT
First-principles calculations on surface hydroxyl impurities in BaF2
Ran JiaH. ShiR. I. Eglitissubject
education.field_of_studyValence (chemistry)General Computer ScienceChemistryPopulationGeneral Physics and AstronomyGeneral ChemistryElectronic structureComputational MathematicsCrystallographyAtomic orbitalMechanics of MaterialsImpurityComputational chemistryDensity of statesGeneral Materials ScienceDensity functional theorySurface layereducationdescription
Abstract OH − impurities located near the (1 1 1) BaF 2 surface have been studied by using density functional theory (DFT) with hybrid exchange potentials, namely DFT-B3PW. Twenty surface OH − configurations were studied, and the hydroxyls located on the first surface layer are the energetically most favorable configurations. For the (1 1 1) BaF 2 surface atomic layers, the surface hydroxyls lead to a remarkable XY -translation and a dilating effect in the Z -direction, overcoming the surface shrinking effect in the perfect slab. Bond population analysis shows that the surface effect strengthens the covalency of surface OH − impurities. The studies on band structures and density of states (DOS) of the surface OH − -impurity systems demonstrate that there are two defect levels induced by OH − impurities. The O p x and p y orbitals form two superposed occupied O bands, located above the valence bands (VB), and the H s orbitals do the major contribution to an empty H band, located below the conduction bands (CB). Because of the surface effect, the O bands move downward, toward the VB with respect to these bands in the bulk case, and this leads to narrowing of the VB → O gap and widening of the O → H gap which corresponds to the first optical absorption.
year | journal | country | edition | language |
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2012-02-01 | Computational Materials Science |