6533b7d6fe1ef96bd1265ab4

RESEARCH PRODUCT

Tuning the dielectric properties of hafnium silicate films

Stephan KudelkaStefan NawkaTheodor DollTim BoesckeElke ErbenLothar FreyChristian Fachmann

subject

PermittivityMaterials scienceCondensed matter physicsAnnealing (metallurgy)chemistry.chemical_elementMineralogyDielectricCondensed Matter PhysicsAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsHafniumTetragonal crystal systemchemistryThermal stabilityElectrical and Electronic EngineeringTinHigh-κ dielectric

description

The influence of Si concentration in hafnium silicate dielectrics on thermal stability and dielectric permittivity was analyzed. A phase diagram was developed using GIXRD and FTIR measurement. The stabilization of the ''higher-k'' cubic/tetragonal phase for annealing temperatures up to 1000^oC with a steady increase in capacitance was demonstrated for Hf"0"."9"4Si"0"."0"6O"2 films. It was also shown that the stabilization of nano-crystalline Hf"0"."8"0Si"0"."2"0O"2 films can be realized for annealing temperatures up to 900^oC. The influence of TiN electrodes on the dielectric constant and the leakage current characteristic was also investigated. A permittivity increase for annealing temperatures up to 1000^oC without degradation of leakage current was shown.

yearjournalcountryeditionlanguage
2007-12-01Microelectronic Engineering
https://doi.org/10.1016/j.mee.2007.02.011