6533b7d6fe1ef96bd1265dec
RESEARCH PRODUCT
Potential of amorphous Mo–Si–N films for nanoelectronic applications
P. KivinenJouni AhopeltoHannu KattelusM. YlonenAlexander SavinT. Haatainensubject
Materials scienceSiliconchemistry.chemical_elementmictamict alloyamorphous metal filmSurface roughnessElectrical and Electronic EngineeringArgonMo-Si-Nbusiness.industryMetallurgyAtmospheric temperature rangeCondensed Matter PhysicsMicrostructureAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsAmorphous solidchemistrynanoscale wiringtemperature coefficient of resistivityOptoelectronicsbusinessElectron-beam lithographyMetallic bondingdescription
The properties of amorphous metallic molybdenum–silicon–nitrogen (Mo–Si–N) films were characterised for use in nanoelectronic applications. The films were deposited by co-sputtering of molybdenum and silicon targets in a gas mixture of argon and nitrogen. The atomic composition, microstructure and surface roughness were studied by RBS, TEM and AFM analyses, respectively. The electrical properties were investigated in the temperature range 80 mK to 300 K. No transition into a superconductive state was observed. Nanoscale wires were fabricated using electron beam lithography with their properties measured as a function of temperature.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2003-11-01 | Microelectronic Engineering |