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RESEARCH PRODUCT
Photoluminescence in silicon-doped n-indium selenide
Jaime RieraAlfredo SeguraA. Chevysubject
PhotoluminescenceCondensed matter physicsCondensed Matter::OtherExcitonDopingchemistry.chemical_elementCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsMolecular physicsElectronic Optical and Magnetic MaterialsCondensed Matter::Materials Sciencechemistry.chemical_compoundchemistrySelenidePhotoluminescence excitationCharge carrierAbsorption (electromagnetic radiation)Indiumdescription
Photoluminescence results on silicon-doped indium selenide are reported. The effect of temperature and excitation intensity is studied. At low temperature, free and neutral donor bound exciton peaks are observed. Above 100 K only free exciton and band-to-band photoluminescence is detected. In order to give account of the full lineshape as a function of the absorption coefficient, the Urbach absorption tail of InSe is measured. Transmission and reflection photoluminescence spectra are also compared in order to study the effect of carrier diffusion. The shape of the photoluminescence spectrum can be accounted for through a direct gap model.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1994-03-16 | Physica Status Solidi (a) |