6533b7d6fe1ef96bd1266424
RESEARCH PRODUCT
Nanofabrication of TaS2 conducting layers nanopatterned with Ta2O5 insulating regions via AFM
Andres Castellanos-gomezEfrén Navarro-moratallaAlicia Forment-aliagaElena Pinilla-cienfuegosEugenio Coronadosubject
FabricationNanolithographyMaterials sciencelawAtomic force microscopyTransistorMaterials ChemistryNanotechnologyGeneral ChemistryElectronicsLocal oxidation nanolithographyNanoscopic scalelaw.inventiondescription
It is demonstrated how local oxidation nanolithography performed with an atomic force microscope (AFM-LON) may be successfully employed for the nanopatterning of insulating regions of Ta2O5 on TaS2 ultrathin metallic layers. This provides a simple approach for the fabrication of electronic devices, such as single-electron transistors, at the nanoscale.
year | journal | country | edition | language |
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2013-01-01 | Journal of Materials Chemistry C |