6533b7d6fe1ef96bd126655a
RESEARCH PRODUCT
Radiation-induced defects in sapphire single crystals irradiated by a pulsed ion beam
Anatoli I. PopovH. A. NovikovR. I. BatalovS. V. NikiforovD.v. AnanchenkoG. R. RamazanovaR. M. BayazitovV. N. Kuzovkovsubject
010302 applied physicsNuclear and High Energy PhysicsPhotoluminescenceMaterials scienceIon beamAnalytical chemistryCathodoluminescence02 engineering and technologyAtmospheric temperature range021001 nanoscience & nanotechnology01 natural sciencesThermoluminescenceIon0103 physical sciencesIrradiation0210 nano-technologyLuminescenceInstrumentationdescription
Abstract The luminescence and thermal stability of defects formed in α-Al2O3 single crystals after powerful (300 keV) pulsed irradiation with C+/H+ ion beam were investigated. It was found by measuring of optical density, photoluminescence, and pulsed cathodoluminescence that ion irradiation induces both single F-, F+-centers and F2-type aggregate centers. An intense thermoluminescence band with a complex shape was observed in the broad temperature range of 350–700 K, its intensity decreases with increasing of the energy density of the ion beam. The thermal stability of the F-type defects produced in α-Al2O3 after irradiation with a pulsed ion beam is comparable to that in neutron-irradiated samples. The appropriate kinetics of annealing of radiation-induced defects has been analyzed in terms of the diffusion-controlled bimolecular reactions between F-type centers and complementary interstitial oxygen ions. Thus, two important kinetic parameters – the migration energy of mobile interstitials and pre-exponential – have been evaluated and discussed.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2020-03-01 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |